The influence of back gate bias on the OCTO SOI MOSFET’s response to X-ray radiation
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2015-09-10
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FINO, L. M. S.
Marcilei Aparecida Guazzelli
RENAUX, C.
FLANDRE, D.
Salvador Gimenez
Marcilei Aparecida Guazzelli
RENAUX, C.
FLANDRE, D.
Salvador Gimenez
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Journal of Integrated Circuits and Systems
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FINO, L. M. S.; GUAZZELLI, M. A.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. The influence of back gate bias on the OCTO SOI MOSFET’s response to X-ray radiation. Journal of Integrated Circuits and Systems, v. 10, n. 1, p. 43-48, sept. 2015.
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© 2015 Brazilian Microelectronics Society. All rights reserved.This work investigates the X-ray irradiation impact on the performance of an on-conventional transistor called OCTO SOI MOSFET that adopts an octagonal gate shape instead of a rectangular. The electrical behaviors of both devices were studied through an experimental comparative analysis of the total ionizing dose influence. In addition, the back-gate bias technique was applied in these devices to reestablish its threshold voltages and drain currents conditions that were degraded due the trapping of positive charges in the buried oxide. As the main finding of this work, after the irradiation procedure, we notice that the OCTO device is capable to reestablish its prerad electrical behavior with a smaller back gate bias than the one observed in the standard one counterpart. This is mainly because the parasitic transistors in the bird’s beak region are practically deactivated due the particular octagonal gate geometry.