Analytical model for the threshold voltage in junctionless nanowire transistors of different geometries

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dc.contributor.authorTREVISOLI, R. D.
dc.contributor.authorRodrigo Doria
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T22:03:18Z
dc.date.available2022-01-12T22:03:18Z
dc.date.issued2011-09-02
dc.description.abstractJunctionless nanowire transistors (JNTs) are considered promising for the sub-20 nm era. As these devices have a constant doping profile from source to drain, they have a great scalability without the need for rigorously controlled doping and activation techniques. These devices also present a flexible threshold voltage, which strongly depends on the device cross section. This work proposes an analytical model for JNTs. The model is derived from the solution of the Poisson equation with the appropriate boundary conditions. The quantum confinement for devices of reduced dimensions has also been accounted. The threshold voltage in cylindrical and trigate JNTs are analyzed. Tridimensional numerical simulations were performed to validate the model. ©The Electrochemical Society.
dc.description.firstpage147
dc.description.issuenumber1
dc.description.lastpage154
dc.description.volume39,
dc.identifier.citationTREVISOLI, R. D.; DORIA, R; PAVANELLO, M. A. Analytical model for the threshold voltage in junctionless nanowire transistors of different geometries. ECS Transactions, v. 39, n. 1, p. 147-154 Sept. 2011.
dc.identifier.doi10.1149/1.3615188
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4195
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleAnalytical model for the threshold voltage in junctionless nanowire transistors of different geometries
dc.typeArtigo de evento
fei.scopus.citations6
fei.scopus.eid2-s2.0-80053365480
fei.scopus.subjectActivation techniques
fei.scopus.subjectAnalytical model
fei.scopus.subjectCross section
fei.scopus.subjectDifferent geometry
fei.scopus.subjectDoping profiles
fei.scopus.subjectFlexible threshold voltage
fei.scopus.subjectNanowire transistors
fei.scopus.subjectTrigate
fei.scopus.updated2025-01-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80053365480&origin=inward
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