Impact of graded-channel SOI MOSFET application on the performance of Cascode and Wilson current mirrors

Abstract

This work shows the impact of the use of graded-channel SOI MOSFETs (GC) in Wilson and Cascode current mirrors. The study was made through bi-dimensional simulations and experimental measurements, focusing on the mirroring precision, the output swing voltage (VOS) and output resistance of each architecture comparing with the conventional SOI devices. It was observed that the devices of graded-channel (GC) presented some improvement in the mirroring precision and a significant increase in the output resistance and output swing in all the architectures studied if compared to standard fully depleted SOI MOSEET. the setting time of GC current mirrors has been Also studied and has demonstrated improvements in relation to conventional SOI devices. © The Electrochemical Society.