Impact of graded-channel SOI MOSFET application on the performance of Cascode and Wilson current mirrors

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dc.contributor.advisorSANTOS, A. A.
dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-01-12T22:05:14Z
dc.date.available2022-01-12T22:05:14Z
dc.date.issued2007-09-06
dc.description.abstractThis work shows the impact of the use of graded-channel SOI MOSFETs (GC) in Wilson and Cascode current mirrors. The study was made through bi-dimensional simulations and experimental measurements, focusing on the mirroring precision, the output swing voltage (VOS) and output resistance of each architecture comparing with the conventional SOI devices. It was observed that the devices of graded-channel (GC) presented some improvement in the mirroring precision and a significant increase in the output resistance and output swing in all the architectures studied if compared to standard fully depleted SOI MOSEET. the setting time of GC current mirrors has been Also studied and has demonstrated improvements in relation to conventional SOI devices. © The Electrochemical Society.
dc.description.firstpage441
dc.description.issuenumber1
dc.description.lastpage450
dc.description.volume9
dc.identifier.citationSANTOS, A. A.; FLANDRE, D.; PAVANELLO, M. A. Impact of graded-channel SOI MOSFET application on the performance of Cascode and Wilson current mirrors. ECS Transactions, v. 9, n. 1, p. 441-450, Sept., 2007.
dc.identifier.doi10.1149/1.2766916
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4325
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleImpact of graded-channel SOI MOSFET application on the performance of Cascode and Wilson current mirrors
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-45249118396
fei.scopus.subject(2+1)-dimensional
fei.scopus.subjectcascode
fei.scopus.subjectcurrent mirroring
fei.scopus.subjectExperimental measurements
fei.scopus.subjectGraded-channel SOI MOSFET
fei.scopus.subjectMicroelectronics technology
fei.scopus.subjectOutput swing
fei.scopus.subjectSOI-MOSFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45249118396&origin=inward
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