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An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs

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Tipo de produção

Artigo

Data de publicação

2015

Texto completo (DOI)

Periódico

IEEE Electron Device Letters

Editor

Citações na Scopus

24

Autores

Gimenez S.P.
Correia M.M.
Neto E.D.
Silva C.R.

Orientadores

Resumo

© 1980-2012 IEEE.This letter describes the impact of using a new gate geometry (ellipsoidal) rather than the standard one (rectangular) to implement planar metal-oxide-semiconductor field-effect transistors (MOSFETs). Our experimental results have been carried out using a 350-nm bulk complementary MOS technology node. We show that the proposed layout has been capable of increasing the ON-state and saturation drain currents in 2 and 3.2 times, respectively. In addition, the ellipsoidal MOSFET has been able to reduce the delay time constant by 61%. Therefore, we believe this new layout can be used as an alternative way to implement MOSFETs, boosting their analog electrical performance with an appropriate layout changing.

Citação

GIMENEZ, SALVADOR P.; CORREIA, MARCELLO M.; NETO, ENRICO D.; SILVA, CRISTINA R.. An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs. IEEE Electron Device Letters, v. 36, n. 7, p. 705-707, 2015.

Palavras-chave

Keywords

Ellipsoidal layout style; LCE and PAMDLE; MOSFET

Assuntos Scopus

Electrical performance; Ellipsoidal layout style; Gate geometry; LCE and PAMDLE; MOS technology; MOS-FET; Planar metal; Saturation drain current

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