An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs
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Artigo
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2015
Autores
Gimenez S.P.
Correia M.M.
Neto E.D.
Silva C.R.
Correia M.M.
Neto E.D.
Silva C.R.
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Periódico
IEEE Electron Device Letters
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GIMENEZ, SALVADOR P.; CORREIA, MARCELLO M.; NETO, ENRICO D.; SILVA, CRISTINA R.. An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs. IEEE Electron Device Letters, v. 36, n. 7, p. 705-707, 2015.
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© 1980-2012 IEEE.This letter describes the impact of using a new gate geometry (ellipsoidal) rather than the standard one (rectangular) to implement planar metal-oxide-semiconductor field-effect transistors (MOSFETs). Our experimental results have been carried out using a 350-nm bulk complementary MOS technology node. We show that the proposed layout has been capable of increasing the ON-state and saturation drain currents in 2 and 3.2 times, respectively. In addition, the ellipsoidal MOSFET has been able to reduce the delay time constant by 61%. Therefore, we believe this new layout can be used as an alternative way to implement MOSFETs, boosting their analog electrical performance with an appropriate layout changing.