An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs
N/D
Tipo de produção
Artigo
Data de publicação
2015
Texto completo (DOI)
Periódico
IEEE Electron Device Letters
Editor
Texto completo na Scopus
Citações na Scopus
24
Autores
Gimenez S.P.
Correia M.M.
Neto E.D.
Silva C.R.
Orientadores
Resumo
© 1980-2012 IEEE.This letter describes the impact of using a new gate geometry (ellipsoidal) rather than the standard one (rectangular) to implement planar metal-oxide-semiconductor field-effect transistors (MOSFETs). Our experimental results have been carried out using a 350-nm bulk complementary MOS technology node. We show that the proposed layout has been capable of increasing the ON-state and saturation drain currents in 2 and 3.2 times, respectively. In addition, the ellipsoidal MOSFET has been able to reduce the delay time constant by 61%. Therefore, we believe this new layout can be used as an alternative way to implement MOSFETs, boosting their analog electrical performance with an appropriate layout changing.
Citação
GIMENEZ, SALVADOR P.; CORREIA, MARCELLO M.; NETO, ENRICO D.; SILVA, CRISTINA R.. An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs. IEEE Electron Device Letters, v. 36, n. 7, p. 705-707, 2015.
Palavras-chave
Keywords
Ellipsoidal layout style; LCE and PAMDLE; MOSFET
Assuntos Scopus
Electrical performance; Ellipsoidal layout style; Gate geometry; LCE and PAMDLE; MOS technology; MOS-FET; Planar metal; Saturation drain current