Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors

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dc.contributor.authorRIBEIRO, T. A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:54Z
dc.date.available2022-01-12T21:57:54Z
dc.date.issued2017-07-28
dc.description.abstractThis paper studies the effective mobility in n- and p-type junctionless nanowire transistors (JNT) with variable fin width from quasi-planar to nanowire devices. JNTs electrical parameters were analyzed and the results show that smaller fin width have higher mobility while the mobility decreases for quasi-planar devices. Simulations were used to analyze the mobility showing that small fin devices reach higher mobility for smaller gate bias variation above the threshold voltage and a higher mobility in the middle of the channel due to the better electrostatic coupling compared to larger devices.
dc.identifier.citationRIBEIRO, T. A.; PAVANELLO, M. A.; CERDEIRA, A. Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors. In. SIMPÓSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS: CHIP ON THE SANDS, SBMICRO, 32., 2017, Fortaleza: SBMicro 2017 - 32º Simpósio de Tecnologia e Dispositivos Microeletrônicos: Chip on the Sands, co-localizado Simpósios: 30º SBCCI - Projeto de Circuitos e Sistemas, 2º INSCIT - Instrumentação Eletrônica, 7º WCAS - Casos de Design de IC e 17º SForum - Fórum de Estudantes de Graduação, 2017.
dc.identifier.doi10.1109/SBMicro.2017.8112998
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3825
dc.relation.ispartofSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageAccumulation Mobility
dc.subject.otherlanguageBulk Mobility
dc.subject.otherlanguageFin Width
dc.subject.otherlanguageJunctionless
dc.titleAnalysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-85040573300
fei.scopus.subjectBulk mobility
fei.scopus.subjectEffective mobilities
fei.scopus.subjectElectrical parameter
fei.scopus.subjectElectrostatic coupling
fei.scopus.subjectFin widths
fei.scopus.subjectJunctionless
fei.scopus.subjectJunctionless nanowire transistors (JNT)
fei.scopus.subjectNanowire transistors
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040573300&origin=inward
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