Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
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2006-01-05
Autores
SIMOEN, E.
CLAEYS. C.
LUKYANCHIKOVA, N.
GARBER, N.
SMOLANKA, A.
DER AGOPIAN, P. G.
MARTINO, J. A.
CLAEYS. C.
LUKYANCHIKOVA, N.
GARBER, N.
SMOLANKA, A.
DER AGOPIAN, P. G.
MARTINO, J. A.
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Solid-State Electronics
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SIMOEN, E.; CLAEYS. C.; LUKYANCHIKOVA, N.; GARBER, N.; SMOLANKA, A.; DER AGOPIAN, P. G.; MARTINO, J. A. Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs. Solid-State Electronics, v. 50, n. 1, p. 52-57, Jan. 2006.
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The impact of using a twin-gate (TG) configuration on the Electron Valence-Band (EVB) tunnelling-related floating-body effects has been studied in partially depleted (PD) SOI MOSFETs belonging to a 0.13 μm CMOS technology. In particular, the influence on the so-called linear kink effects (LKEs), including the second peak in the linear transconductance (gm) and the associated Lorentzian noise overshoot was investigated. It is shown that while there is a modest reduction of the second gm peak, the noise overshoot may be reduced by a factor of 2. At the same time, little asymmetry is observed when switching the role of the slave and the master transistor, in contrast to the case of the impact ionization related kink effects. Two-dimensional numerical simulations support the observations and show that both the gm, the second gm peak and the body potential are changed in the TG structure compared with a single transistor. © 2005 Elsevier Ltd. All rights reserved.