A simple method to model nonrectangular-gate layout in SOI MOSFETs

Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2005-09-07
Autores
Renato Giacomini
MARTINO, J. A.
Orientador
Periódico
Proceedings - Electrochemical Society
Título da Revista
ISSN da Revista
Título de Volume
Citação
GIACOMINI, R.; MARTINO, J. A. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Proceedings - Electrochemical Society, v. PV 2005-08, p. 472-481, sept. 2005.
Texto completo (DOI)
Palavras-chave
Resumo
A simple method to obtain an analytical current model for nonrectangulargate layout in SOI MOSFETs is presented, based on partition of the original layout into trapezoidal parts, and modeling these trapezoids by a closed form expression. A generic shape factor is defined for comparison between devices of different shapes in the same technology. Three-dimensional simulation and some experimental results were carried out to verify the method accurateness. The obtained expression showed good agreement both to simulation and experimental results. The method can be applied to a wide range of gate layout shapes.