A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation

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dc.contributor.authorDe Souza M.
dc.contributor.authorPavanello M.A.
dc.contributor.authorIniguez B.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2005
dc.description.abstractIn this work a continuous analytical model for analog simulation of submicron asymmetrically doped silicon-on-insulator (SOI) nMOSFET using the graded-channel (GC) architecture, valid from weak to strong inversion regimes, is proposed. Analytical models accounting for mobility degradation due to the vertical field, channel length modulation, drain induced barrier lowering and velocity saturation effects have been included in the model formulation. Also the action of parasitic bipolar transistor intrinsic to the SOI MOSFET has been considered. The proposed model considers the highly doped part of the GC transistor acting as a 'main' transistor, whose drain voltage is modulated by the remaining part of the channel. Experimental results and two-dimensional simulated data were used to test the model, by comparing the drain current and some important characteristics for analog circuit design, such as the transconductance over the drain current ratio and output conductance, achieving a good agreement in both cases. © 2005 Elsevier Ltd. All rights reserved.
dc.description.firstpage1683
dc.description.issuenumber10
dc.description.lastpage1692
dc.description.volume49
dc.identifier.citationDE SOUZA, Michelly; PAVANELLO, Marcelo A.; INIGUEZ, Benjamin; FLANDRE, Denis. A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation. Solid-State Electronics, v. 49, n. 10, p. 1683-1692, 2005.
dc.identifier.doi10.1016/j.sse.2005.08.001
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1064
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog simulation
dc.subject.otherlanguageContinuous model
dc.subject.otherlanguageDevice modeling
dc.subject.otherlanguageGraded-channel SOI MOSFET
dc.titleA charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
dc.typeArtigo
fei.scopus.citations14
fei.scopus.eid2-s2.0-27744484542
fei.scopus.subjectAnalog simulation
fei.scopus.subjectContinuous model
fei.scopus.subjectDevice modeling
fei.scopus.subjectGraded-channel SOI MOSFET
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=27744484542&origin=inward
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