Impact of halo implantation on the lifetime assessment in partially depleted soi transistors

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dc.contributor.authorMilene Galeti
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-2709-1734
dc.date.accessioned2022-01-12T22:05:33Z
dc.date.available2022-01-12T22:05:33Z
dc.date.issued2006-11-03
dc.description.abstractThis paper investigates the impact of the presence of a HALO implanted region on the lifetime analysis, based on a study of drain current switch-off transients. The latter were experimentally determined and compared with two-dimensional numerical simulations for PD SOI nMOSFET devices fabricated in a 0.13 μm CMOS technology. This study investigated for different channel lengths the drain current transient in relation with devices parameters such as the body potential, threshold voltage and the current density in the source/drain junctions. In the HALO devices the hole current density through the junctions between source/drain and body were not very significant, so that the influence of the junction is only due to the capacitive coupling between source/body and drain/body channel. For the channel length range studied (from 10 to 0.2μm), the transient time of HALO devices suffers from a 56% reduction. However, in the no HALO devices, there is beyond the capacitive coupling also a significant increase in the hole current density, causing a transient time reduction of 74%, for the same channel length range. copyright The Electrochemical Society.
dc.description.firstpage351
dc.description.issuenumber4
dc.description.lastpage359
dc.description.volume3
dc.identifier.citationGALETI, M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.Impact of halo implantation on the lifetime assessment in partially depleted soi transistors. ECS Transactions, v. 3, n. 4, p. 351-359, Nov. 2006.
dc.identifier.doi10.1149/1.2355769
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4346
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleImpact of halo implantation on the lifetime assessment in partially depleted soi transistors
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-33846979521
fei.scopus.subjectCapacitive coupling
fei.scopus.subjectCurrent switch off transients
fei.scopus.subjectDrain currents
fei.scopus.subjectHalo implantation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33846979521&origin=inward
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