Physical characterization and reliability aspects of MuGFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2007-09-06
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
CLAEYS, C.
SIMOEN, E.
RAFI, J. M.
Marcelo Antonio Pavanello
MARTINO, J. A.
Orientadores
Resumo
Multi-gate devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling to the 32 nm and below technology nodes. Worldwide much attention is given to FinFET and MuGFET device architectures. This paper reviews some physical characterization and reliability aspects of such devices. Attention is given to aspects such as transient floating body effects, their performance at both high and low temperatures, gate coupling effects and their low frequency noise behavior. In addition, their potential radiation hardness in view of space applications is outlined. © The Electrochemical Society.
Citação
CLAEYS, C.; SIMOEN, E.; RAFI, J. M.; PAVANELLO, M. A. Physical characterization and reliability aspects of MuGFETs. ECS Transactions, v, 9, n. 1, p. 281-294, Sept. 2007.
Palavras-chave
Keywords
Assuntos Scopus
device architectures; Electrochemical Society (ECS); Floating-body effects; Gate couplings; Low frequency noise (1/f noise); Low temperature (LTR); Microelectronics technology; Multi gate devices; Physical characterization; radiation hardness; reliability aspects; Road maps; Technology nodes