Physical characterization and reliability aspects of MuGFETs
Nenhuma Miniatura disponível
Citações na Scopus
1
Tipo de produção
Artigo de evento
Data
2007-09-06
Autores
CLAEYS, C.
SIMOEN, E.
RAFI, J. M.
Marcelo Antonio Pavanello
MARTINO, J. A.
SIMOEN, E.
RAFI, J. M.
Marcelo Antonio Pavanello
MARTINO, J. A.
Orientador
Periódico
ECS Transactions
Título da Revista
ISSN da Revista
Título de Volume
Citação
CLAEYS, C.; SIMOEN, E.; RAFI, J. M.; PAVANELLO, M. A. Physical characterization and reliability aspects of MuGFETs. ECS Transactions, v, 9, n. 1, p. 281-294, Sept. 2007.
Texto completo (DOI)
Palavras-chave
Resumo
Multi-gate devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling to the 32 nm and below technology nodes. Worldwide much attention is given to FinFET and MuGFET device architectures. This paper reviews some physical characterization and reliability aspects of such devices. Attention is given to aspects such as transient floating body effects, their performance at both high and low temperatures, gate coupling effects and their low frequency noise behavior. In addition, their potential radiation hardness in view of space applications is outlined. © The Electrochemical Society.