Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs
dc.contributor.advisorOrcid | https://orcid.org/0000-0003-1361-3650 | |
dc.contributor.author | CCOTO, C. U. C. | |
dc.contributor.author | BERGAMASHI, F. E. | |
dc.contributor.author | Marcelo Antonio Pavanello | |
dc.date.accessioned | 2023-06-01T06:09:39Z | |
dc.date.available | 2023-06-01T06:09:39Z | |
dc.date.issued | 2021-08-31 | |
dc.description.abstract | ©2021 IEEE.In this work, the study of the effective electron mobility (peff) of n-channel MOS transistor nanowires is presented. By extracting the mobility of the top and sidewall using the surface current separation technique together with the split-CV method. Analyzing the comparison of simulated TCAD results and experimental transistors fabricated with various fin widths (12nm-82nm) and how the effect of varying the fin width and applied substrate voltages interfere with carrier mobility values. | |
dc.identifier.citation | CCOTO, C. U. C.; BERGAMASHI, F. E.; PAVANELLO, M. A. Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs. SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices, aug. 2021. | |
dc.identifier.doi | 10.1109/SBMicro50945.2021.9585753 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/4814 | |
dc.relation.ispartof | SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | Effective mobility | |
dc.subject.otherlanguage | Hybrid orientation | |
dc.subject.otherlanguage | Mobility extraction | |
dc.subject.otherlanguage | Nanowire | |
dc.subject.otherlanguage | Split-cv | |
dc.title | Analysis of Fin Width Influence on the Carrier's Mobility of Nanowire MOSFETs | |
dc.type | Artigo de evento | |
fei.scopus.citations | 1 | |
fei.scopus.eid | 2-s2.0-85126148023 | |
fei.scopus.subject | Effective electron mobility | |
fei.scopus.subject | Effective mobilities | |
fei.scopus.subject | Fin widths | |
fei.scopus.subject | Hybrid orientation | |
fei.scopus.subject | Mobility extraction | |
fei.scopus.subject | N-channel | |
fei.scopus.subject | Nanowire MOSFETs | |
fei.scopus.subject | Separation techniques | |
fei.scopus.subject | Split-cv | |
fei.scopus.subject | Surface current | |
fei.scopus.updated | 2025-01-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85126148023&origin=inward |