Analysis of self-heating effect in graded-channel silicon-on-insulator nMOSFETs

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dc.contributor.authorCOSTA, S. E. DE S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:25Z
dc.date.available2023-08-26T23:50:25Z
dc.date.issued2007-08-28
dc.description.abstractThis paper presents a Self-Heating (SH) analysis using conventional Silicon-On-Insulator (SOI) in comparison to Graded-Channel (GC) SOI nMOSFETs devices. The analysis is performed comparing devices with the same mask channel length and with the same effective channel length. Two-dimensional numerical simulations are performed in both studies considering the lattice heating. The models and the thermal conductive constant used in these simulations are also presented. It is demonstrated that GC devices with the same mask channel length presents similar occurrence of SH independently of the length of lightly doped region despite the larger drain current. On the other hand, for similar effective channel length, the SH is less pronounced in GC transistors as the mask channel length has to be increased in order to compensate the current difference. © 2006 The Electrochemical Society.
dc.description.firstpage257
dc.description.issuenumber1
dc.description.lastpage264
dc.description.volume4
dc.identifier.citationCOSTA, S. E. DE S.; PAVANELLO, M. A.; MARTINO, J. A. Analysis of self-heating effect in graded-channel silicon-on-insulator nMOSFETs. ECS Transactions, v. 4, n. 1, p. 257-264, aug. 2006.
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5034
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleAnalysis of self-heating effect in graded-channel silicon-on-insulator nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-33847665938
fei.scopus.subjectchannel length
fei.scopus.subjectGraded channel devices
fei.scopus.subjectLattice heating
fei.scopus.subjectMask channels
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847665938&origin=inward
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