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Improving the X-ray radiation tolerance of the analog ICs by using OCTO layout style

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Tipo de produção

Artigo de evento

Data de publicação

2013-09-06

Texto completo (DOI)

Periódico

Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices

Editor

Citações na Scopus

11

Autores

FINO, L. N. D. S.
Marcilei Aparecida Guazzelli
RENAUX, C.
FLANDRE, D.
Salvador Gimenez

Orientadores

Resumo

This paper investigates and compares experimentally the total ionizing dose (TID) effects in the main analog parameters of the fully depleted (FD) OCTO Silicon-On-Insulator (SOI)n-type Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) (OSM), that presents an octagonal gate geometry, versus its conventional (rectangular gate geometry) counterpart (CSM). The main analog parameters taken into account in this study are the drain current in saturation region (IDSsat), the maximum transconductance (gm-max), the transconductance (gm) over the drain current (IDS) ratio (gm/IDS), the unity voltage gain frequency (f T), intrinsic voltage gain (AV) and Early voltage (V EA). This work demonstrates that OCTO layout style achieved the same relative variation due the TID effects as the conventional for the main analog parameters, but keeping the higher electrical performance related to the LCE and PAMDLE effects. In addition the OSM had a higher tolerance in terms of g m-max, IDSsat and VEA relative variation and fT and AV performance in strong inversion regime. © 2013 IEEE.

Citação

FINO, L. N. D. S.; GUAZZELLI, M. A.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Improving the X-ray radiation tolerance of the analog ICs by using OCTO layout style. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.

Palavras-chave

Keywords

enclosed geometries; LCE; OCTO SOI MOSFET; PAMDLE; TID

Assuntos Scopus

Intrinsic voltage gains; LCE; Maximum transconductance; Metal oxide semiconductor field-effect transistors; PAMDLE; SOI-MOSFETs; TID; Total ionizing dose effects

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