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A simple electron mobility model considering the silicon-dielectric interface orientation for circular surrounding-gate transistor

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Tipo de produção

Artigo

Data de publicação

2012-01-05

Periódico

Journal of Integrated Circuits and Systems

Editor

Citações na Scopus

0

Autores

PERIN, A. L.
PEREIRA, A. S. N.
AGOPIAN, P. G. D.
Joao Antonio Martino
Giacomini R.

Orientadores

Resumo

AIn this work, a simple model that accounts for the variation of electron mobility as a function of the silicondielectric interface crystallographic orientation is presented. Simulations were conducted in order to compute the effective mobility of planar devices and its results were compared to experimental data for several interface orientations. The error between experimental data and the proposed model remained bellow 4%. The model has been applied to nMOS circular surrounding gate (thin-pillar transistor - CYNTHIA) and allowed the observationof current density variations as a function of the interface orientation around the silicon pillar.

Citação

PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R. A simple electron mobility model considering the silicon-dielectric interface orientation for circular surrounding-gate transistor. Journal of Integrated Circuits and Systems, v. 7, n. 2, p. 100-106, 2012.

Palavras-chave

Keywords

Circular; CYNTHIA; Microelectronics; Mobility; MuGFET

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