A simple electron mobility model considering the silicon-dielectric interface orientation for circular surrounding-gate transistor

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dc.contributor.authorPERIN, A. L.
dc.contributor.authorPEREIRA, A. S. N.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorGiacomini R.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2023-08-26T23:49:14Z
dc.date.available2023-08-26T23:49:14Z
dc.date.issued2012-01-05
dc.description.abstractAIn this work, a simple model that accounts for the variation of electron mobility as a function of the silicondielectric interface crystallographic orientation is presented. Simulations were conducted in order to compute the effective mobility of planar devices and its results were compared to experimental data for several interface orientations. The error between experimental data and the proposed model remained bellow 4%. The model has been applied to nMOS circular surrounding gate (thin-pillar transistor - CYNTHIA) and allowed the observationof current density variations as a function of the interface orientation around the silicon pillar.
dc.description.firstpage100
dc.description.issuenumber2
dc.description.lastpage106
dc.description.volume7
dc.identifier.citationPERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R. A simple electron mobility model considering the silicon-dielectric interface orientation for circular surrounding-gate transistor. Journal of Integrated Circuits and Systems, v. 7, n. 2, p. 100-106, 2012.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4961
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageCircular
dc.subject.otherlanguageCYNTHIA
dc.subject.otherlanguageMicroelectronics
dc.subject.otherlanguageMobility
dc.subject.otherlanguageMuGFET
dc.titleA simple electron mobility model considering the silicon-dielectric interface orientation for circular surrounding-gate transistor
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-84869989455
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869989455&origin=inward
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