Short channel continuous model for double-gate junctionless transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2014-01-20
Texto completo (DOI)
Periódico
2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
PAZ, B. C.
Marcelo Antonio Pavanello
AVILA, F.
CERDEIRA, A.
Orientadores
Resumo
This work aims to present a continuous model of the drain current for short channel double-gate junctionless transistors, from a charge-based model for long channel double-gate devices. The proposed model is based on the influence of the drain bias in the channel potential and the reduction of the effective channel length in saturation regime, for short channel transistors. To model validation it will be used three dimensional numerical simulations.
Citação
PAZ, B. C.; PAVANELLO, M. A.; AVILA, F.; CERDEIRA, A. Short channel continuous model for double-gate junctionless transistors. 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings. Jan. 2014.
Palavras-chave
Keywords
Junctionless; Model; Short channel
Assuntos Scopus
Charge-based models; Continuous modeling; Effective channel length; Junctionless; Junctionless transistors; Short channel transistors; Short channels; Three-dimensional numerical simulations