Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs
Nenhuma Miniatura disponível
Citações na Scopus
2
Tipo de produção
Artigo de evento
Data
2011-10-06
Autores
BÜHLER, Rudolf Theoderich
AGOPIAN, P. G. D.
Renato Giacomini
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
AGOPIAN, P. G. D.
Renato Giacomini
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
Orientador
Periódico
Proceedings - IEEE International SOI Conference
Título da Revista
ISSN da Revista
Título de Volume
Citação
BÜHLER, R. T.; AGOPIAN, P. G. D.; GIACOMINI, R. SIMOEN, E.; CLAEYS, C.; MARTINO, J. A. Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs. Proceedings - IEEE International SOI Conference, Oct. 2011.
Texto completo (DOI)
Palavras-chave
Resumo
The stress profiles extracted showed that the variation in the silicon fin dimensions influence the stress levels and distributions along the silicon fin. From the analog performance view, these variations in the stress have influence on some electric parameters. The reduction of the total fin length showed no significant change in the parameters, although a reduction in the stress level was noticed, leading to the conclusion that the shift in the stress level is too small to cause a pronounced impact on the parameters. On the other hand, the reduction of the silicon fin height showed more interesting results. Despite that the standard device with smaller fin height presented a lower intrinsic voltage gain performance when compared to the reference device, when implementing strain it supersedes the reference device and presented an enhancement in the intrinsic voltage gain over the standard one up to 8 %, larger than the 5.1 % obtained for the reference device. © 2011 IEEE.