Experimental validation of the drain current analytical model of the fully depleted diamond SOI nMOSFETs by using paired t-test statistical evaluation
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2012-09-02
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PERUZZI, V. V.
RENAUX, C.
FLANDRE, D.
Salvador Gimenez
RENAUX, C.
FLANDRE, D.
Salvador Gimenez
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ECS Transactions
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PERUZZI, V. V.; RENAUZ, C.; RENAUX, C.; FLANDRE, D. GIMEMEZ, S. Experimental validation of the drain current analytical model of the fully depleted diamond SOI nMOSFETs by using paired t-test statistical evaluation. ECS Transactions, v. 49, n. 1, p. 169-176, Sept. 2012.
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The focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits. © The Electrochemical Society.