Impact of the series resistance in the I-V characteristics of nMOS junctionless nanowire transistors

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dc.contributor.authorRodrigo Doria
dc.contributor.authorTREVISOLI, D. T.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:03:14Z
dc.date.available2022-01-12T22:03:14Z
dc.date.issued2011-09-02
dc.description.abstractThe series resistance (Rs) of Junctionless Nanowire Transistors (JNTs) with different doping concentrations was extracted from 473 K down to 100 K. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices and the impact of the series resistance on the drain current of the devices was evaluated. The R S analysis was carried out through experimental results and devices tridimensional numerical simulations. According to the study, R S presents opposite behavior with the temperature variation in EVI triple transistors and JNTs. In the latter, a reduction on R S is noted with the temperature increase, whereas a resistance decrease is obtained with the temperature lowering in IM devices. The parasitic resistance in JNTs affects the drain current in such a way that there may not be a Zero Temperature Coefficient (ZTC) operation point. © The Electrochemical Society.
dc.description.firstpage231
dc.description.issuenumber1
dc.description.lastpage238
dc.description.volume39
dc.identifier.citationDORIA, R.; TREVISOLI, D. T.; PAVANELLO, M. A. Impact of the series resistance in the I-V characteristics of nMOS junctionless nanowire transistors. ECS Transactions, v. 39, n.1, p. 231-238. Sept, 2011.
dc.identifier.doi10.1149/1.3615198
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4190
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleImpact of the series resistance in the I-V characteristics of nMOS junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations13
fei.scopus.eid2-s2.0-84856886721
fei.scopus.subjectDoping concentration
fei.scopus.subjectInversion modes
fei.scopus.subjectIV characteristics
fei.scopus.subjectNanowire transistors
fei.scopus.subjectOperation point
fei.scopus.subjectParasitic resistances
fei.scopus.subjectSeries resistances
fei.scopus.subjectTemperature increase
fei.scopus.subjectTemperature variation
fei.scopus.subjectTriple gate devices
fei.scopus.subjectZero temperature coefficients
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856886721&origin=inward
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