Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments

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dc.contributor.authorPERUZZI , VINICIUS VONO
dc.contributor.authorCRUZ, WILLIAM
dc.contributor.authorSILVA, GABRIEL AUGUSTO DA
dc.contributor.authorSIMOEN, EDDY
dc.contributor.authorCLAEYS, COR
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2021-12-21T21:00:35Z
dc.date.available2021-12-21T21:00:35Z
dc.date.issued2020-08-10
dc.description.abstractThis paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transis-tors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technol-ogy and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha () angle equal to 90 ̊ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.
dc.description.firstpage1
dc.description.issuenumber2
dc.description.lastpage5
dc.description.volume15
dc.identifier.citationPERUZZI , V. V.; CRUZ, W.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for MOSFETs to boost the device matching in Ionizing radiation environments. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
dc.identifier.doi10.29292/jics.v15i2.185
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3494
dc.relation.ispartofJICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rightsAcesso Aberto
dc.subjectDiamond Layout Style
dc.subjectHardness-by-design technique
dc.subjectMOSFETs matching, analog CMOS IC
dc.subjectTotal Ion-izing Dose
dc.titleUsing the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environmentspt_BR
dc.typeArtigopt_BR
fei.scopus.citations2
fei.scopus.eid2-s2.0-85089906544
fei.scopus.updated2024-05-01
fei.source.urlhttps://jics.org.br/ojs/index.php/JICS/article/view/185
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