Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures

Página do item simplificado
dc.contributor.authorNOVO, CARLA
dc.contributor.authorBUHLER, RUDOLF
dc.contributor.authorBAPTISTA, JOAO
dc.contributor.authorGIACOMINI, RENATO
dc.contributor.authorAFZALIAN, ARYAN
dc.contributor.authorFLANDRE, DENIS
dc.date.accessioned2019-08-19T23:45:24Z
dc.date.available2019-08-19T23:45:24Z
dc.date.issued2017
dc.description.firstpage1641
dc.description.issuenumber6
dc.description.lastpage1648
dc.description.volume17
dc.identifier.citationNOVO, CARLA; BUHLER, RUDOLF; BAPTISTA, JOAO; GIACOMINI, RENATO; AFZALIAN, ARYAN; FLANDRE, DENIS. Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v. 17, n. 6, p. 1641-1648, 2017.
dc.identifier.doi10.1109/jsen.2017.2647848
dc.identifier.issn1558-1748
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1260
dc.relation.ispartofIEEE Sensors Journal
dc.rightsAcesso Restrito
dc.titleQuantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperaturespt_BR
dc.typeArtigopt_BR
fei.scopus.citations5
fei.scopus.eid2-s2.0-85015252558
fei.scopus.updated2024-03-04
Arquivos
Coleções
Artigos