Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors
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2
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2014-10-29
Autores
Rodrido Doria
TREVISOLI, R.
Michelly De Souza
Marcelo Antonio Pavanello
TREVISOLI, R.
Michelly De Souza
Marcelo Antonio Pavanello
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2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
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DORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A. Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct. 2014.
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This paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.