A simple current model for edgeless SOI nMOSFET and a 3-D analysis

Página do item simplificado
dc.contributor.authorGiacomini R.
dc.contributor.authorMartino J.A.
dc.date.accessioned2019-08-19T23:45:23Z
dc.date.available2019-08-19T23:45:23Z
dc.date.issued2005
dc.description.abstractThis work presents a new approach for the current model of thin-film, fully depleted SOI edgeless transistors, based on the asymmetric trapezoidal gate model. The most common current model for an edgeless transistor is obtained by taking the rectangular device drain current expression and substituting the device width by an "equivalent" device width, usually given by the average between source and drain width of the channel. However, this model does not take into account some effects that take place near the corners of the device and that have a significant influence on the current expression. The new model is tested using three-dimensional numerical simulation and experimental data. The proposed model is still simple and both simulation and experimental results show that it presents an improved performance. © 2005 Elsevier Ltd. All rights reserved.
dc.description.firstpage1255
dc.description.issuenumber8
dc.description.lastpage1261
dc.description.volume49
dc.identifier.citationGiacomini, R; MARTINO, J. A simple current model for edgeless SOI nMOSFET and a 3-D analysis. Solid-State Electronics, v. 49, n. 4, p. 1255-1261, 2005.
dc.identifier.doi10.1016/j.sse.2005.06.020
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1253
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageSOI
dc.subject.otherlanguageThree-dimensional simulation
dc.subject.otherlanguageTransistor model
dc.titleA simple current model for edgeless SOI nMOSFET and a 3-D analysis
dc.typeArtigo
fei.scopus.citations1
fei.scopus.eid2-s2.0-24144470029
fei.scopus.subjectEdgeless transistors
fei.scopus.subjectSOI
fei.scopus.subjectThree-dimensional simulation
fei.scopus.subjectTransistor models
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=24144470029&origin=inward
Arquivos
Coleções
Artigos