Harmonic distortion analysis of SOI triple gate FinFETs applied to 2-MOS balanced structures
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2009-05-29
Autores
Rodrigo Doria
MARTINO, J. A.
CERDEIRA, A.
Marcelo Antonio Pavanello
MARTINO, J. A.
CERDEIRA, A.
Marcelo Antonio Pavanello
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ECS Transactions
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DORIA R.; MARTINO, J. A.; CERDEIRA, A.; PAVANELLO, M. A. Harmonic distortion analysis of SOI triple gate FinFETs applied to 2-MOS balanced structures. ECS Transactions, v. 19, n. 4, p. 289-294, May, 2009.
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This work presents an evaluation of the non-linearities exhibited in 2-MOS resistive structures composed by triple gate FinFETs with several fin widths down to 30 nm. The harmonic distortion has been analysed in terms of its third order component (HD3) as a function of the gate voltage, the input amplitude voltage and the fin width. The linearity has also been analysed with respect to the on-resistance, which constitutes a key parameter in such circuits. Along the harmonic distortion evaluation, the non-linearity causes are pointed out. At lower gate voltages, wider devices present smaller HD3 with respect to the narrower ones, while the contrary occurs at higher gate voltages. ©The Electrochemical Society.