Ultra-low-power diodes using junctionless nanowire transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-03-18
Texto completo (DOI)
Periódico
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
Michelly De Souza
Rodrido Doria
TREVISOLI, R.D.
Marcelo Antonio Pavanello
Orientadores
Resumo
In this work, the performance of Ultra-Low-Power (ULP) Diodes implemented with Junctionless Nanowire Transistors (JNTs) is presented for the first time. Experimental data of ULP Diodes formed by Junctionless Nanowire CMOS Transistors show that nanowire width, length and doping concentration play an important role in the reverse current of the diodes, affecting the on-off current ratio.
Citação
DE SOUZA, M. DORIA, R.; TREVISOLI, R.D.; PAVANELLO, M. A. Ultra-low-power diodes using junctionless nanowire transistors. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, p. 313-316, March, 2015.
Palavras-chave
Keywords
junctionless nanowire transistors; ultra-low-power diode
Assuntos Scopus
CMOS transistors; Doping concentration; Nanowire transistors; Off current; Reverse currents; Ultra low power