Ultra-low-power diodes using junctionless nanowire transistors

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2015-03-18
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Michelly De Souza
Rodrido Doria
TREVISOLI, R.D.
Marcelo Antonio Pavanello
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EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
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DE SOUZA, M. DORIA, R.; TREVISOLI, R.D.; PAVANELLO, M. A. Ultra-low-power diodes using junctionless nanowire transistors. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, p. 313-316, March, 2015.
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In this work, the performance of Ultra-Low-Power (ULP) Diodes implemented with Junctionless Nanowire Transistors (JNTs) is presented for the first time. Experimental data of ULP Diodes formed by Junctionless Nanowire CMOS Transistors show that nanowire width, length and doping concentration play an important role in the reverse current of the diodes, affecting the on-off current ratio.

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