Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature
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2016-08-29
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MOLTO, A. R.
Rodrigo Doria
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
Rodrigo Doria
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
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SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
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MOLTO, A. R.; DORIA, R.; DE SOUZA, M.; FLANDRE, D; PAVANELLO, M. A. Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.
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This work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear regime at VDS=50mV. It is shown that the origin of the noise changes from carrier number fluctuations to mobility fluctuations as the temperature is increased. Additionally, the generation and recombination noise plays a significant role on the overall noise with the temperature rise.