OCTO FinFET

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dc.contributor.authorNETO E, D.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. OCTO FinFET. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:01:55Z
dc.date.available2022-01-12T22:01:55Z
dc.date.issued2013-09-06
dc.description.abstractThis paper is conceptual and introduces for the first time a new concept of structural design for FinFETs, the OCTO FinFET, which consists of an evolution of the Diamond layout style. Three-dimensional numerical simulations were performed in order to compare the performance between this new architecture and the conventional counterpart. It is shown that this layout style can significantly improve important parameters such as drain current, transconductance and on-state resistance. © 2013 IEEE.
dc.identifier.doi10.1109/SBMicro.2013.6676167
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4100
dc.relation.ispartofChip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageFinFET
dc.subject.otherlanguagemodelling and simulation
dc.subject.otherlanguageOCTO
dc.subject.otherlanguageTCAD simulation
dc.titleOCTO FinFET
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-84893432631
fei.scopus.subjectFinFET
fei.scopus.subjectFinFETs
fei.scopus.subjectModelling and simulations
fei.scopus.subjectOCTO
fei.scopus.subjectOn-state resistance
fei.scopus.subjectTCAD simulation
fei.scopus.subjectThree-dimensional numerical simulations
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84893432631&origin=inward
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