Experimental Demonstration of Ω-Gate SOI Nanowire MOS Transistors' Mobility Variation Induced by Substrate Bias

dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.advisorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorBERMAMASCHI, F. E.
dc.contributor.authorRIBEIRO, T. A.
dc.contributor.authorPAZ, B. C.
dc.contributor.authorMichelly De Souza
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2023-06-01T06:05:41Z
dc.date.available2023-06-01T06:05:41Z
dc.date.issued2022
dc.description.abstract© 1963-2012 IEEE.This work investigates the carrier mobility variation in Ω-gate silicon-on-insulator (SOI) nanowire MOS transistors induced by substrate (or back) biasing. The analysis is carried out through experimental measurements and 3-D TCAD simulation, performed in n-type devices with variable fin width. Mobility enhancement is observed for lower back bias levels, due to the initial conduction through the Si-BOX interface, which presents higher mobility, prior to the activation of the front channel. As back bias is increased, however, the strong substrate-induced electric field in the back channel (BC) is responsible for worsening scattering mechanisms in the BC, such as surface roughness and acoustic phonon scattering, inducing mobility degradation. The effect is amplified as the fin width increases. For short-channel devices, the use of back bias was more beneficial for mobility due to a stronger mobility enhancement and lower mobility degradation.
dc.description.firstpage4022
dc.description.issuenumber7
dc.description.lastpage4028
dc.description.volume69
dc.identifier.citationBERMAMASCHI, F. E.; RIBEIRO, T. A.; PAZ, B. C.; DE SOUZA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. Experimental demonstration of ω-gate soi nanowire mos transistors' mobility variation induced by substrate bias. IEEE Transactions on Electron Devices, v. 69, n. 7, march, 2022.
dc.identifier.doi10.1109/TED.2022.3177393
dc.identifier.issn1557-9646
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4798
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageCarrier mobility
dc.subject.otherlanguagenanowire MOS transistor
dc.subject.otherlanguagesubstrate bias
dc.titleExperimental Demonstration of Ω-Gate SOI Nanowire MOS Transistors' Mobility Variation Induced by Substrate Bias
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-85131743210
fei.scopus.subjectBack bias
fei.scopus.subjectFin widths
fei.scopus.subjectMobility enhancement
fei.scopus.subjectMobility variation
fei.scopus.subjectMOS-FET
fei.scopus.subjectMOSFETs
fei.scopus.subjectNanowire MOS transistor
fei.scopus.subjectSilicon on insulator
fei.scopus.subjectSubstrate bias
fei.scopus.subjectSubstrate bias.
fei.scopus.updated2024-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85131743210&origin=inward
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