Role of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage

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dc.contributor.authorCERDEIRA, A.
dc.contributor.authorHERRERA, F. A.
dc.contributor.authorPAZ, B. C.
dc.contributor.authorESTRADA, M.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:59:44Z
dc.date.available2022-01-12T21:59:44Z
dc.date.issued2015-10-13
dc.description.abstractThis work studies the effect of doping level applied to the extensions on the electrical characteristics of short channel double gate junctionless transistor. Structures with homogeneous doping profile between source and drain contacts and structures with additional doping in the extensions are studied. 2D simulations were performed for structures with doping concentration of 5×1018 and 1019 cm-3, silicon layer thickness of 10 and 15 nm and with/without extensions of 30 nm. Above flat band voltage, the drain current in saturation presents an important decrease for homogeneously doped structures with extensions attributed to the reduction of potentials at high gate voltage. Lower short channel effects, as less threshold voltage roll off and less subthreshold slope take place in this type of structures due to the shift of minimum potential in the extension regions.
dc.identifier.citationCERDEIRA, A.; HERRERA, F. A.; PAZ, B. C.; ESTRADA, M.; PAVANELLO, M. A. Role of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices, Oct. 2015.
dc.identifier.doi10.1109/SBMicro.2015.7298108
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3952
dc.relation.ispartofSBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnomalous current in JLT
dc.subject.otherlanguageJunctionless transistor
dc.titleRole of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-84961786454
fei.scopus.subjectanomalous current in JLT
fei.scopus.subjectDoping concentration
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectHomogeneous doping
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectShort-channel effect
fei.scopus.subjectSubthreshold slope
fei.scopus.subjectThreshold voltage roll-off
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84961786454&origin=inward
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