Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA

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dc.contributor.authorTONFAT, J.
dc.contributor.authorKASTENSMIDT, F. L.
dc.contributor.authorARTOLA, L.
dc.contributor.authorHUBERT, G.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorADDED, N.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorAGUIRRE, F.
dc.contributor.authorMACCHIONE, E. L. A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-01-12T21:57:59Z
dc.date.available2022-01-12T21:57:59Z
dc.date.issued2017
dc.description.abstract© 2016 IEEE.This work highlights the impact of low LET heavy ions particles on the reliability of 28-nm Bulk SRAM cells from 4rtix-7 FPGA. Radiation tests showed significant differences in he MBU cross section of configuration (CRAM) and BRAM memory cells under various angles of incidence. Radiation results re compared with simulations at transistor level by using the ioft error tool, MUSCA SEP3 (MUlti-SCAle Single Event henomenon Prediction Platform) coupled with circuit imulations with the aim to analyze the differences of upset ensitivity as a function of layout SRAM. This analysis leads to etermine the correct layout and technology used in the tested PGA. By using the detailed classification of MBU events, it is ossible to analyze the effectiveness of correction mechanisms of he FPGA configuration memory.
dc.description.firstpage1
dc.description.lastpage6
dc.description.volume2016-September
dc.identifier.citationTONFAT, J.; KASTENSMIDT, F. L.; ARTOLA, L.; HUBERT, G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; GUAZZELLI, M. A. Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, v. 2016-September, n. 1-6, oct. 2016.
dc.identifier.doi10.1109/RADECS.2016.8093186
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3831
dc.relation.ispartofProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
dc.rightsAcesso Restrito
dc.subject.otherlanguageFPGA
dc.subject.otherlanguageMBU
dc.subject.otherlanguageSingle Event Effects
dc.subject.otherlanguageSoft Errors
dc.titleAnalyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA
dc.typeArtigo de evento
fei.scopus.citations8
fei.scopus.eid2-s2.0-85043578064
fei.scopus.subjectAngles of incidence
fei.scopus.subjectCorrection mechanism
fei.scopus.subjectDetailed classification
fei.scopus.subjectFPGA configuration
fei.scopus.subjectRadiation tests
fei.scopus.subjectSingle event effects
fei.scopus.subjectSoft error
fei.scopus.subjectTransistor level
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85043578064&origin=inward
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