An improved model for the triangular SOI misalignment test structure
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2004-09-07
Autores
Renato Giacomini
MARINO, J. A.
MARINO, J. A.
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Periódico
Proceedings - Electrochemical Society
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GIACOMINI, R.; MARINO, J. A. An improved model for the triangular SOI misalignment test structure. Proceedings - Electrochemical Society, v. 3, p. 57-62, sept. 2023.
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The triangular misalignment test structure is an arrangement of MOS transistors to calculate the poly and source/drain diffusion misalignment as a function of drain current differences. Although these structures have non-rectangular shapes, which may be detrimental for the design, the advantage of measuring currents instead of voltage differences make them very useful. This work presents a new analytic misalignment error model for thin-film, fully depleted SOI technology, using non rectangular devices. Three-dimensional numerical simulation is used as a reference for models comparison and verification. These simulation results show that the proposed analytical model presents an improved performance compared to those available in the literature.