X-ray radiation effects in overlapping circular-gate MOSFET's
N/D
Tipo de produção
Artigo de evento
Data de publicação
2011-09-23
Texto completo (DOI)
Periódico
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Editor
Texto completo na Scopus
Citações na Scopus
12
Autores
DE LIMA, J. A.
Marcilei Aparecida Guazzelli
CIRNE, K. H.
Roberto Santos
MEDINA, N. H.
Orientadores
Resumo
IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process. © 2011 IEEE.
Citação
DE LIMA, J. A.; GUAZZELLI, M. A.; CIRNE, K. H.; SANTOS, R. B. B.; MEDINA, N. H. X-ray radiation effects in overlapping circular-gate MOSFET's. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. p. 88-91, Sept. 2011.
Palavras-chave
Keywords
electronic devices; leakage current; MOSFET; radiation effects; Total Ionizing Dose (TID); X-ray
Assuntos Scopus
CMOS processs; Electronic device; MOS-FET; Sub-threshold behavior; Total Ionizing Dose; X-ray exposure