Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures
N/D
Tipo de produção
Artigo de evento
Data de publicação
2022-07-04
Texto completo (DOI)
Periódico
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
Editor
Texto completo na Scopus
Citações na Scopus
8
Autores
Michelly De Souza
CERDEIRA, A.
ESTRADA, M.
BARRAUD, S.
CASSE, M.
VINET, M.
FAYNOT, O.
Marcelo Antonio Pavanello
Orientadores
Resumo
© 2022 IEEE.This work presents a comparison between the Gate-Induced Drain Leakage (GIDL) current of the nanowire (tri-gate MOSFET with narrow fin width) and nanosheet (tri-gate MOSFET with wide fin width) SOI MOSFETs at high temperatures, in the range between 300 K and 580 K. The study is conducted using experimental data, corroborated with 3D TCAD simulations. It is demonstrated that the GIDL current normalized by the total fin width is larger in nanosheet MOSFET than for the nanowire at high temperatures. Additionally, the nanosheet device presents a larger variation of the normalized GIDL current with the temperature than the nanowire one.
Citação
DE SOUZA, M.; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; CASSE, M.;VINET, M.; FAYNOT, O.; PAVANELLO M. A. Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022. Jul. 2022.
Palavras-chave
Keywords
GIDL; high temperature; nanosheet MOSFET; nanowire MOSFET
Assuntos Scopus
Fin widths; Gate induced drain leakage currents; Gate induced drain leakages; Highest temperature; MOSFETs; Nanosheet MOSFET; Nanowire MOSFETs; SOI-MOSFETs; TCAD simulation; Tri-gate MOSFET