Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures

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dc.contributor.authorMichelly De Souza
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorESTRADA, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-12-01T06:03:34Z
dc.date.available2022-12-01T06:03:34Z
dc.date.issued2022-07-04
dc.description.abstract© 2022 IEEE.This work presents a comparison between the Gate-Induced Drain Leakage (GIDL) current of the nanowire (tri-gate MOSFET with narrow fin width) and nanosheet (tri-gate MOSFET with wide fin width) SOI MOSFETs at high temperatures, in the range between 300 K and 580 K. The study is conducted using experimental data, corroborated with 3D TCAD simulations. It is demonstrated that the GIDL current normalized by the total fin width is larger in nanosheet MOSFET than for the nanowire at high temperatures. Additionally, the nanosheet device presents a larger variation of the normalized GIDL current with the temperature than the nanowire one.
dc.identifier.citationDE SOUZA, M.; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; CASSE, M.;VINET, M.; FAYNOT, O.; PAVANELLO M. A. Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022. Jul. 2022.
dc.identifier.doi10.1109/LAEDC54796.2022.9908212
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4656
dc.relation.ispartof2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
dc.rightsAcesso Restrito
dc.subject.otherlanguageGIDL
dc.subject.otherlanguagehigh temperature
dc.subject.otherlanguagenanosheet MOSFET
dc.subject.otherlanguagenanowire MOSFET
dc.titleAnalysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures
dc.typeArtigo de evento
fei.scopus.citations7
fei.scopus.eid2-s2.0-85139209762
fei.scopus.subjectFin widths
fei.scopus.subjectGate induced drain leakage currents
fei.scopus.subjectGate induced drain leakages
fei.scopus.subjectHighest temperature
fei.scopus.subjectMOSFETs
fei.scopus.subjectNanosheet MOSFET
fei.scopus.subjectNanowire MOSFETs
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectTCAD simulation
fei.scopus.subjectTri-gate MOSFET
fei.scopus.updated2024-10-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85139209762&origin=inward
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