Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
N/D
Tipo de produção
Artigo
Data de publicação
2008
Texto completo (DOI)
Periódico
Solid-State Electronics
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
AGOPIAN P. G. D.
MARTINO, J, A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
The temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. The GIFBE behavior will be evaluated taking into account the impact of carrier recombination and of the effective electric field mobility degradation on the second peak in the transconductance (gm). This floating body effect is also analyzed as a function of temperature. It is shown that the variation of the studied parameters with temperature results in a "C" shape of the threshold voltage corresponding with the second peak in the gm curve. © 2008 Elsevier Ltd. All rights reserved.
Citação
AGOPIAN P. G. D.; MARTINO, J, A.; SIMOEN, E.; CLAEYS, C. Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs. Solid-State Electronics, v. 52, n. 11, p. 1751-1754, Nov. 2008.
Palavras-chave
Keywords
C shape; Gate-induced floating body effect; SOI nMOSFETs; Temperature
Assuntos Scopus
C shape; Carrier recombinations; Electric-field; Floating bodies; Fully depleted; Fully depleted SOI; Gate-induced floating body effect; Nmosfets; Numerical simulations; Silicon-on-Insulator; SOI nMOSFETs; Temperature influences