Analysis of the correlation between NBTI effect and the surface potential in junctionless nanowire transistors

Abstract

© 2020, Brazilian Microelectronics Society. All rights reserved.— This paper discusses the nature of degradation by NBTI effect in pMOS junctionless nanowire transistors when varying the density of interface traps. The data obtained in simulations are analyzed through the extracted hole density to-gether with the surface potential and it is demonstrated how the quality of gate oxide affects the performance of such transistors, when the density of traps, the channel width, the doping con-centration and the gate bias are varied.