Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature
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Tipo de produção
Artigo de evento
Data de publicação
2013-05-16
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
NEMER, J. P.
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
Orientadores
Resumo
In this paper the analog performance of Graded-Channel (GC) SOI nMOSFETs with deep submicrometer channel length is presented. Experimental data of GC transistors fabricated in an industrial 150 nm fully-depleted SOI technology from OKI Semiconductors were used to adjust the two-dimensional numerical simulations, in order to analyze the devices analog behavior by extrapolating their physical parameters. The obtained results show that the larger intrinsic voltage gain improvement occurs when the length of the lightly doped region is approximately 100 nm regardless the total channel length, doping concentration and temperature. © The Electrochemical Society.
Citação
NEMER, J. P.; DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature. ECS Transactions, v. 53, n. 5, p. 149-154, Mayo, 2013.
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Keywords
Assuntos Scopus
Analog behavior; Analog performance; Channel length; Deep submicrometer; Doping concentration; Intrinsic voltage gains; Physical parameters; Two-dimensional numerical simulation