Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature

Página do item simplificado
dc.contributor.authorNEMER, J. P.
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:01:20Z
dc.date.available2022-01-12T22:01:20Z
dc.date.issued2013-05-16
dc.description.abstractIn this paper the analog performance of Graded-Channel (GC) SOI nMOSFETs with deep submicrometer channel length is presented. Experimental data of GC transistors fabricated in an industrial 150 nm fully-depleted SOI technology from OKI Semiconductors were used to adjust the two-dimensional numerical simulations, in order to analyze the devices analog behavior by extrapolating their physical parameters. The obtained results show that the larger intrinsic voltage gain improvement occurs when the length of the lightly doped region is approximately 100 nm regardless the total channel length, doping concentration and temperature. © The Electrochemical Society.
dc.description.firstpage149
dc.description.issuenumber5
dc.description.lastpage154
dc.description.volume53
dc.identifier.citationNEMER, J. P.; DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature. ECS Transactions, v. 53, n. 5, p. 149-154, Mayo, 2013.
dc.identifier.doi10.1149/05305.0149ecst
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4061
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleAnalog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84885623075
fei.scopus.subjectAnalog behavior
fei.scopus.subjectAnalog performance
fei.scopus.subjectChannel length
fei.scopus.subjectDeep submicrometer
fei.scopus.subjectDoping concentration
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectPhysical parameters
fei.scopus.subjectTwo-dimensional numerical simulation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885623075&origin=inward
Arquivos
Coleções
Artigos