Modeling the interface trap density influence on junctionless nanowire transistors behavior

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dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrido Doria
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T21:56:31Z
dc.date.available2022-01-12T21:56:31Z
dc.date.issued2019-02-11
dc.description.abstractThis work proposes a methodology for the modeling of the interface traps influence on the electrical characteristics of Junction less Nanowire Transistors. The interface traps can influence the electrical behavior of junction less in both on-and off-states due to the partial depletion regime operation, in which the surface potential varies with the applied biases. The methodology validation is performed using numerical simulations, where the drain current, the trans conductance, the threshold voltage and the subthreshold slope have been analyzed. The modeling considering different traps energetic distributions has been demonstrated.
dc.identifier.citationTREVISOLI, R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A.; Modeling the interface trap density influence on junctionless nanowire transistors behavior. 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018, Feb. 2019.
dc.identifier.doi10.1109/S3S.2018.8640199
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3730
dc.relation.ispartof2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalytical Modeling
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageNanowires
dc.subject.otherlanguageTrap Density
dc.titleModeling the interface trap density influence on junctionless nanowire transistors behavior
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-85063138509
fei.scopus.subjectElectrical behaviors
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectInterface trap density
fei.scopus.subjectJunctionless
fei.scopus.subjectNanowire transistors
fei.scopus.subjectPartial depletion
fei.scopus.subjectSubthreshold slope
fei.scopus.subjectTrap density
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063138509&origin=inward
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