MARINIELLO, G.Marcelo Antonio Pavanello2022-01-122022-01-122015-05-24MARINIELLO, G.; PAVANELLO, M. A. Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices. ECS Transactions. v, 66, n, 1, p. 259-266, Mayo, 2015.1938-6737https://repositorio.fei.edu.br/handle/FEI/3988This paper aims at comparing the self-heating effects influence between FinFETs and Junctionless Nanowire Transistors (JNT) based on three-dimensional numerical simulations. The self-heating of JNT made with different materials, Silicon and Silicon Carbide, is also studied. The results show lower impact in JNT compared to FinFETs. Also, the self-heating is lower in silicon devices then silicon carbide.Acesso RestritoArtigo de evento10.1149/06601.0259ecst