Aguiar V.A.P.Added N.Medina N.H.Macchione E.L.A.Tabacniks M.H.Aguirre F.R.Silveira M.A.G.Santos R.B.B.Seixas Jr. L.E.2019-08-192019-08-192014V. A. P. Aguiar; ADDED, N.; Medina, N.H.; MACCHIONE, E.L.A.; AGUIRRE, F.; M. H. Tabacniks; SILVEIRA, M. A. G.; R. B. B. Santos; L. E. Seixas Junior. Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 332, p. 397/-400, 2014.0168-583Xhttps://repositorio.fei.edu.br/handle/FEI/1455In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm2 for an external beam arrangement and up to 32 MeV/mg/cm2 for in-vacuum irradiation. © 2014 Elsevier B.V. All rights reserved.Acesso RestritoArtigo10.1016/j.nimb.2014.02.105Electronic devicesHeavy ionsRadiation effectsRutherford scatteringSingle Event Effects