ALVES, C. R.D'OLIVEIRA, L. M.Michelly De Souza2022-12-012022-12-012022-07-04ALVES, C. R.; D'OLIVEIRA, L. M.; DE SOUZA, .M. Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Jul. 2022.https://repositorio.fei.edu.br/handle/FEI/4652© 2022 IEEE.This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.Acesso RestritoArtigo de evento10.1109/LAEDC54796.2022.9907771Analog PerformanceAsymmetricCapacitanceMOSFETSelf-cascodeSilicon-On-Insulator