ALVES, C. R.; PAVANELLO, M. A.; DE SOUZA, M. FLANDRE, D. Experimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs. In. SIMPÓSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS: CHIP ON THE SANDS, SBMICRO, 32., 2017, Fortaleza: SBMicro 2017 - 32º Simpósio de Tecnologia e Dispositivos Microeletrônicos: Chip on the Sands, co-localizado Simpósios: 30º SBCCI - Projeto de Circuitos e Sistemas, 2º INSCIT - Instrumentação Eletrônica, 7º WCAS - Casos de Design de IC e 17º SForum - Fórum de Estudantes de Graduação, 2017.ALVES, C. R.Marcelo Antonio PavanelloMichelly De SouzaFLANDRE, D.2022-01-122022-01-122017-07-28https://repositorio.fei.edu.br/handle/FEI/3824This paper presents an experimental study of mismatching on the analog characteristics of fully-depleted graded-channel SOI MOSFET in comparison to uniformly doped transistors. The study is carried out using dedicated structures to account for the mismatch that have been fabricated at the same chip and with the same technology. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.Acesso RestritoArtigo de evento10.1109/SBMicro.2017.8112992electrical measurementsgraded-channel transistormismatchingSOI MOSFET