Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range

Michelly De SouzaEMAM, M.VANHOENACKER-JANVIER, D.RASKIN, J. P.FLANDRE, D.Marcelo Antonio Pavanello2022-01-122022-01-12201-10-14DE SOUZA, M.; EMAM, M.; VANHOENACKER-JANVIER, D.; RASKIN, J. P.; FLANDRE, D.; PAVANELLO, M. A. Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range. Proceedings - IEEE International SOI Conference. Oct. 2010.https://repositorio.fei.edu.br/handle/FEI/4220Acesso RestritoComparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature rangeArtigo de evento10.1109/SOI.2010.5641388