DER AGOPIAN, P. G.Joao Antonio MartinoSIMOEN, E.CLAEYS, C.2023-08-262023-08-262007-09-01DER AGOPIAN, P. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Series resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs, ECS Transactions, v. 4, n. 1, p. 293-300, sept. 2007.1938-6737https://repositorio.fei.edu.br/handle/FEI/5032This work elaborates on the influence of the series resistance on the linear kink effect (LKE) in twin-gate partially depleted (PD) Silicon-on-Insulator (SOI) nMOSFETs. The study is based on two-dimensional numerical simulations and is validated by experimental results. A relationship between the total resistance and the apparent mobility degradation factor is reported, showing that the twin-gate structure and a conventional SOI transistor with an external resistance both present a similar LKE reduction, The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be also shown. © 2006 The Electrochemical Society.Acesso RestritoArtigo de evento