CONDE, J. E.CERDEIRA, A.Marcelo Antonio Pavanello2022-01-122022-01-122008-09-04CONDE, J. E.; CERDEIRA, A.; PAVANELLO, M. A. 3D triple-gate simulation considering the crystallographic orientations. ECS Transactions, v. 14, n. 1. p.197-201, Sept. 2008.1938-5862https://repositorio.fei.edu.br/handle/FEI/4292Current in FinFET's transistors flows along two different crystallographic orientations, since, typically the FIN top region orientation is <100>, while the sidewalls have <110> orientation. In this paper we present how to represent the mesh structure for these devices, in order to simulate in 3-D, considering different mobility values for each orientation. Results of 3-D simulation considering also the effect of the series resistance are shown and compared with experimental results. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.2956033