Open Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85065545002&origin=inward. Acesso: 14 Junho 2022.ALVES, C. R.FLANDRE, D.Michelly De Souza2022-01-122022-01-122018-12-12ALVES, C. R.; FLANDRE, D.; DE SOUZA, M. Analysis of mismatch on the analog characteristics of GC SOI MOSFETs. Journal of Integrated Circuits and Systems, v. 13, n. 3, p.1-8, Dec. 2018.1872-0234https://repositorio.fei.edu.br/handle/FEI/3799© 2018, Brazilian Microelectronics Society. All rights reserved.This paper presents an evaluation of mismatch impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Important basic parameters such as threshold voltage and sub-threshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.Acesso AbertoArtigo10.29292/JICS.V13I3.16Electrical measurementsGraded-channel transistorMismatchSOI MOSFET