Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://iopscience.iop.org/article/10.1088/1742-6596/1291/1/012025 Acesso em: 22 jun. 2021AGUIAR, V. A. P.MEDINA, N. H.ADDED, N.MACCHIONE, E. L. A.ALBERTON, S. G.RODRIGUES, C. L.SILVA, T. F.ZAHN, G. S.GENEZINI, F. A.MORALLES, M.BENEVENUTI, F.GUAZZELLI, Marcilei Aparecida2021-06-222021-06-222019-01-01AGUIAR, V A P; MORALLES, M; BENEVENUTI, F; GUAZZELLI, M. A. ; MEDINA, N H; ADDED, N; MACCHIONE, E L A; ALBERTON, S G; RODRIGUES, C L; SILVA, T F; ZAHN, G S; GENEZINI, F A. Thermal neutron induced upsets in 28nm SRAM. JOURNAL OF PHYSICS. CONFERENCE SERIES, v. 1291, p. 1-4, 2019.1742-6588https://repositorio.fei.edu.br/handle/FEI/3238In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.enAcesso AbertoArtigo10.1088/1742-6596/1291/1/012025