Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs

SEIXAS, LUIS E.GONCALVEZ, O. L.VAZ, R. G.TELLES, A. C. C.FINCO, S.GIMENEZ, S. P.2019-08-192019-08-192019SEIXAS, LUIS E.; GONCALVEZ, O. L.; VAZ, R. G.; TELLES, A. C. C.; FINCO, S.; GIMENEZ, S. P.. Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs. Journal of Materials Science: Materials in Electronics, v. 1, n. 1, p. 1-13, 2019.1573-482Xhttps://repositorio.fei.edu.br/handle/FEI/1316Acesso AbertoMinimizing the TID effects due to gamma rays by using diamond layout for MOSFETsArtigo10.1007/s10854-019-00747-w